Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells

Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells

InGaN/GaN light-emitting diodes (LEDs) with a graded-composition multiple quantum well (GQW) were designed not only to investigate the effect of polarization field on the efficiency droop in InGaN/GaN multiple quantum wells (MQWs) but to find out possible solutions to prevent or reduce the efficienc...

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Bibliographic Details
Main Authors: Li-Hong Zhu, Wei Liu, Fan-Ming Zeng, Yu-Lin Gao, Bao-Lin Liu, Yi-Jun Lu, Zhong Chen
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Photonics Journal
Subjects:
Metal–organic chemical vapor deposition (MOCVD)
InGaN/GaN multiple quantum well (MQW)
electron leakage
efficiency droop
Online Access:https://ieeexplore.ieee.org/document/6472041/

Internet

https://ieeexplore.ieee.org/document/6472041/

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