Improved performance of ultraviolet AlGaN/GaN npn HPTs by a thin lightly-doped n-AlGaN insertion layer
We reported the improved performance of ultraviolet two-terminal Al0.1GaN/GaN npn heterojunction phototransistors with a 10-nm-thick low-doped n-type Al0.1GaN insertion layer between emitter and base. Optical current gain at 2 V bias was increased from 6.6 × 103 to 9.8 × 104 by inserting the thin un...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5130525 |