An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz f<sub>&#x03C4;</sub> and 901 GHz f<sub>max</sub>. The emitter and base contacts were defined by electron beam lithography with bette...

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Bibliographic Details
Main Authors: Johann C. Rode, Han-Wei Chiang, Prateek Choudhary, Vibhor Jain, Brian J. Thibeault, William J. Mitchell, Mark J. W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, Joel M. Fastenau, Amy W. K. Liu
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
HBT
InGaAs/InP DHBT
THz device
Online Access:https://ieeexplore.ieee.org/document/6924726/

Internet

https://ieeexplore.ieee.org/document/6924726/

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