Epitaxial Layers of InP Doped With Rare Elements for Use in Radiation Detector
We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2007-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/184 |