Epitaxial Layers of InP Doped With Rare Elements for Use in Radiation Detector

Epitaxial Layers of InP Doped With Rare Elements for Use in Radiation Detector

We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.

Bibliographic Details
Main Authors: Halyna Kozak, Bruno Sopko, Karel Zdansky
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2007-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
lpe growth process
inp layers
detector structure.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/184

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