A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances

A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances

In this article, an AlGaN and Si<sub>3</sub>N<sub>4</sub> compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si<sub>3</sub>N<sub>4</sub> insulating layer is partia...

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Bibliographic Details
Main Authors: Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMT
breakdown voltage
buffer layer
electric field
Online Access:https://www.mdpi.com/2072-666X/13/3/464

Internet

https://www.mdpi.com/2072-666X/13/3/464

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