Design Analysis of Integrated Passive Device-Based Balun Devices With High Selectivity for Mobile Application
This paper presents highly selective, low-loss, and miniaturized balun devices fabricated using the integrated passive device (IPD) technique for the GSM band (900/1800 MHz) and the WiFi band (2400 MHz) in mobile applications. Balun devices were fabricated on a gallium arsenide (GaAs) substrate usin...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8638780/ |