Temperature dependence of the optical absorption edge of doped gallium arsenide
The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave...
| Main Authors: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | English |
| Publicado: |
Vasyl Stefanyk Precarpathian National University
2020-06-01
|
| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Acceso en liña: | https://journals.pnu.edu.ua/index.php/pcss/article/view/3587 |