Improved short channel electrostatics through design of partially junction-less double-gate MOSFETs
Quantum confinement effects tend to diminish gate control over the channel, further degrading the channel electrostatics of short channel Double-Gate (DG) Silicon-on-Insulator (SOI) MOSFETs. In this work, we first design an n-channel Junction-less (JL) DG MOSFET with a channel length (Lg) of 10 nm,...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0038244 |