Low‐power multi‐band injection‐locked wireless receiver in 0.13 μm CMOS

Low‐power multi‐band injection‐locked wireless receiver in 0.13 μm CMOS

Abstract The design and analysis of a low‐power multi‐band injection‐locked wireless receiver, implemented in complementary metal–oxide–semiconductor (CMOS) 130 nm technology, for wireless sensor network (WSN) applications are presented. The proposed receiver composed of an injection‐locked oscillat...

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Bibliographic Details
Main Authors: Jared Mercier, Yushi Zhou
Format: Article
Language:English
Published: Hindawi-IET 2021-09-01
Series:IET Circuits, Devices and Systems
Subjects:
amplitude shift keying
CMOS integrated circuits
frequency shift keying
injection locked oscillators
low noise amplifiers
low‐power electronics
Online Access:https://doi.org/10.1049/cds2.12048

Internet

https://doi.org/10.1049/cds2.12048

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