Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures
The alleviation effect on the Schottky barrier height (SBH) (ΦB) using ultrathin titanium dioxide and hafnium dioxide dielectrics in a single layer and a bilayer stack was demonstrated. ΦB in the Pt/n-Si contact was reduced from 0.53 to −0.058, 0.3, and −0.12 eV using 3 nm TiO2, 1 nm HfO2, and high-...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-07-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0095003 |