Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures
The alleviation effect on the Schottky barrier height (SBH) (ΦB) using ultrathin titanium dioxide and hafnium dioxide dielectrics in a single layer and a bilayer stack was demonstrated. ΦB in the Pt/n-Si contact was reduced from 0.53 to −0.058, 0.3, and −0.12 eV using 3 nm TiO2, 1 nm HfO2, and high-...
Main Authors: | C. P. Harisha, M.-H. Liao, C.-C. Kei, S. Joshi |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-07-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0095003 |
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