Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz
A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2″ diameter direct-bandgap 5 µm silicon doped 105 Ω-cm GaN on 434 µm sa...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-12-01
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| Series: | Data in Brief |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352340920313019 |