Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors
This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power de...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/7/1203 |