GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

The lateral GaN power semiconductor technology enables monolithic integration of complete power converter topologies such as half-bridges, multi-phase and multi-level converters. Fabrication on Si substrates enables low-cost and mass production. However, the operation of monolithic GaN power convert...

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Bibliographic Details
Main Authors: Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:e-Prime: Advances in Electrical Engineering, Electronics and Energy
Subjects:
Gallium nitride
Substrates
Power integrated circuits
HEMTs
Half-bridges
Power converters
Online Access:http://www.sciencedirect.com/science/article/pii/S2772671123000669

Internet

http://www.sciencedirect.com/science/article/pii/S2772671123000669

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