High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric

High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric

Abstract Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher energy efficiency, and compatibility with rapid prototyping compared to their counterparts fabricated through traditional semiconductor manufacturing processes. Unfortunately, solution‐processed trans...

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Bibliographic Details
Main Authors: Yutong Liu, Yang Yu, Tianzhi Li, Yihong Hu, Ranjith Unnithan, Efstratios Skafidas
Format: Article
Language:English
Published: Wiley-VCH 2023-11-01
Series:Advanced Electronic Materials
Subjects:
dielectrics
low‐temperature solution processes
semiconductors
thin film transistors
Online Access:https://doi.org/10.1002/aelm.202300415

Internet

https://doi.org/10.1002/aelm.202300415

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