Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up t...

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Bibliographic Details
Main Authors: Kevin Chen, Daisuke Kiriya, Mark Hettick, Mahmut Tosun, Tae-Jun Ha, Surabhi Rao Madhvapathy, Sujay Desai, Angada Sachid, Ali Javey
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4891824

Internet

http://dx.doi.org/10.1063/1.4891824

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