Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up t...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4891824 |
| _version_ | 1811327759666905088 |
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| author | Kevin Chen Daisuke Kiriya Mark Hettick Mahmut Tosun Tae-Jun Ha Surabhi Rao Madhvapathy Sujay Desai Angada Sachid Ali Javey |
| author_facet | Kevin Chen Daisuke Kiriya Mark Hettick Mahmut Tosun Tae-Jun Ha Surabhi Rao Madhvapathy Sujay Desai Angada Sachid Ali Javey |
| author_sort | Kevin Chen |
| collection | DOAJ |
| description | Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiNx through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe2 n-MOSFETs with a mobility of ∼70 cm2/V s. |
| first_indexed | 2024-04-13T15:12:41Z |
| format | Article |
| id | doaj.art-c192f684c98a4db2baa99b0f9ffbd89f |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T15:12:41Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-c192f684c98a4db2baa99b0f9ffbd89f2022-12-22T02:41:57ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092504092504-710.1063/1.4891824004492APMAir stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge densityKevin Chen0Daisuke Kiriya1Mark Hettick2Mahmut Tosun3Tae-Jun Ha4Surabhi Rao Madhvapathy5Sujay Desai6Angada Sachid7Ali Javey8Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAElectrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAStable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiNx through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe2 n-MOSFETs with a mobility of ∼70 cm2/V s.http://dx.doi.org/10.1063/1.4891824 |
| spellingShingle | Kevin Chen Daisuke Kiriya Mark Hettick Mahmut Tosun Tae-Jun Ha Surabhi Rao Madhvapathy Sujay Desai Angada Sachid Ali Javey Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density APL Materials |
| title | Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density |
| title_full | Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density |
| title_fullStr | Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density |
| title_full_unstemmed | Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density |
| title_short | Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density |
| title_sort | air stable n doping of wse2 by silicon nitride thin films with tunable fixed charge density |
| url | http://dx.doi.org/10.1063/1.4891824 |
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