Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up t...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Kevin Chen, Daisuke Kiriya, Mark Hettick, Mahmut Tosun, Tae-Jun Ha, Surabhi Rao Madhvapathy, Sujay Desai, Angada Sachid, Ali Javey
Formatua: Artikulua
Hizkuntza:English
Argitaratua: AIP Publishing LLC 2014-09-01
Saila:APL Materials
Sarrera elektronikoa:http://dx.doi.org/10.1063/1.4891824

Internet

http://dx.doi.org/10.1063/1.4891824

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