Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and...

Full description

Bibliographic Details
Main Authors: Cristina Medina-Bailon, José Luis Padilla, Carlos Sampedro, Luca Donetti, Vihar P. Gergiev, Francisco Gamiz, Asen Asenov
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Micromachines
Subjects:
direct source-to-drain tunneling
tunneling probability
Landauer formalism
multi-subband ensemble Monte Carlo
non-equilibrium Green’s functions
DGSOI
Online Access:https://www.mdpi.com/2072-666X/12/6/601

Internet

https://www.mdpi.com/2072-666X/12/6/601

Similar Items