Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

CaCu3Ti4−xYxO12 (0≤x≤0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The impedance and modulus tests both suggeste...

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Bibliographic Details
Main Authors: Jianming Deng, Xiaojun Sun, Saisai Liu, Laijun Liu, Tianxiang Yan, Liang Fang, Brahim Elouadi
Format: Article
Language:English
Published: World Scientific Publishing 2016-03-01
Series:Journal of Advanced Dielectrics
Subjects:
CaCu3Ti4O12
grain boundary
bulk conduction
electrochemical techniques
dispersion
dielectric properties
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X16500090

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http://www.worldscientific.com/doi/pdf/10.1142/S2010135X16500090

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