Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates

Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates

This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al<sub>2</sub>O<sub>3</sub> substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially...

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Bibliographic Details
Main Authors: Ruozheng Wang, Fang Lin, Qiang Wei, Gang Niu, Hong-Xing Wang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
heteroepitaxial diamond
film thickness
morphology
TEM
etching pits
Online Access:https://www.mdpi.com/1996-1944/15/2/624

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https://www.mdpi.com/1996-1944/15/2/624

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