Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates
This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al<sub>2</sub>O<sub>3</sub> substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially...
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MDPI AG
2022-01-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/2/624 |
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| author | Ruozheng Wang Fang Lin Qiang Wei Gang Niu Hong-Xing Wang |
| author_facet | Ruozheng Wang Fang Lin Qiang Wei Gang Niu Hong-Xing Wang |
| author_sort | Ruozheng Wang |
| collection | DOAJ |
| description | This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al<sub>2</sub>O<sub>3</sub> substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H<sub>2</sub>/O<sub>2</sub> plasma treatment were used to show defect distribution at the diamond/Ir/Al<sub>2</sub>O<sub>3</sub> interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications. |
| first_indexed | 2024-03-10T01:02:51Z |
| format | Article |
| id | doaj.art-c1a7ffa227c74e5884f880a15263dbda |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T01:02:51Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-c1a7ffa227c74e5884f880a15263dbda2023-11-23T14:32:14ZengMDPI AGMaterials1996-19442022-01-0115262410.3390/ma15020624Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> SubstratesRuozheng Wang0Fang Lin1Qiang Wei2Gang Niu3Hong-Xing Wang4Ministry Education Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry Education Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry Education Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaMinistry Education Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaThis paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al<sub>2</sub>O<sub>3</sub> substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H<sub>2</sub>/O<sub>2</sub> plasma treatment were used to show defect distribution at the diamond/Ir/Al<sub>2</sub>O<sub>3</sub> interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.https://www.mdpi.com/1996-1944/15/2/624heteroepitaxial diamondfilm thicknessmorphologyTEMetching pits |
| spellingShingle | Ruozheng Wang Fang Lin Qiang Wei Gang Niu Hong-Xing Wang Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates Materials heteroepitaxial diamond film thickness morphology TEM etching pits |
| title | Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates |
| title_full | Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates |
| title_fullStr | Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates |
| title_full_unstemmed | Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates |
| title_short | Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al<sub>2</sub>O<sub>3</sub> Substrates |
| title_sort | thickness impact on the morphology strain relaxation and defects of diamond heteroepitaxially grown on ir al sub 2 sub o sub 3 sub substrates |
| topic | heteroepitaxial diamond film thickness morphology TEM etching pits |
| url | https://www.mdpi.com/1996-1944/15/2/624 |
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