Understanding dose correction for high-resolution 50 kV electron-beam lithography on thick resist layers
Electron-beam lithography (EBL) is a relevant technique to the nanoscience community as it enables the production of precise structures at the nanoscale. When writing features in a thick resist layer, dose insufficiency is typically encountered when resolution approaches the focal spot of the electr...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-08-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007222000387 |