Understanding dose correction for high-resolution 50 kV electron-beam lithography on thick resist layers

Electron-beam lithography (EBL) is a relevant technique to the nanoscience community as it enables the production of precise structures at the nanoscale. When writing features in a thick resist layer, dose insufficiency is typically encountered when resolution approaches the focal spot of the electr...

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Bibliographic Details
Main Authors: Mattias Åstrand, Thomas Frisk, Hanna Ohlin, Ulrich Vogt
Format: Article
Language:English
Published: Elsevier 2022-08-01
Series:Micro and Nano Engineering
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007222000387