InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

<p>Abstract</p> <p>The morphological and optical properties of In<sub>0.2</sub>Ga<sub>0.8</sub>As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In<sub>0.2</sub>Ga<sub&g...

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Bibliographic Details
Main Authors: Wu Jiang, Fan Dongsheng, Li Shibing, Yu Shui-Qing, Li Zhenhua, Wang Zhiming, Guo Aqiang, Manasreh Omar, Salamo Gregory
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Photoluminescence
Quantum well
High-index surfaces
Superluminescent diode
Atomic force microscopy
Online Access:http://dx.doi.org/10.1007/s11671-010-9605-2

Internet

http://dx.doi.org/10.1007/s11671-010-9605-2

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