Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper...

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Bibliographic Details
Main Authors: Salahaldein Ahmed, Pengyu Lai, Sudharsan Chinnaiyan, Alan Mantooth, Zhong Chen
Format: Article
Language:English
Published: Elsevier 2024-03-01
Series:e-Prime: Advances in Electrical Engineering, Electronics and Energy
Subjects:
High-temperature (HT) gate driver
Power module
Power device packaging
High-temperature applications
Silicon carbide MOSFET
BJT
Online Access:http://www.sciencedirect.com/science/article/pii/S2772671123003078

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http://www.sciencedirect.com/science/article/pii/S2772671123003078

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