Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-03-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123003078 |