Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications

Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe<sub>2</sub>) heterojunction. The prepared Gr/ReSe<sub>2</sub>-HS demonstrated an excellent mobility of 380 cm<sup>2</sup>/Vs, current on/off ratio ~...

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Bibliographic Details
Main Authors: Ghazanfar Nazir, Adeela Rehman, Sajjad Hussain, Othman Hakami, Kwang Heo, Mohammed A. Amin, Muhammad Ikram, Supriya A. Patil, Muhammad Aizaz Ud Din
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
graphene
ReSe<sub>2</sub>
heterostructure
photodetector
NO<sub>2</sub> gas sensor
Schottky barrier height
Online Access:https://www.mdpi.com/2079-4991/12/21/3713

Internet

https://www.mdpi.com/2079-4991/12/21/3713

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