Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications
Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe<sub>2</sub>) heterojunction. The prepared Gr/ReSe<sub>2</sub>-HS demonstrated an excellent mobility of 380 cm<sup>2</sup>/Vs, current on/off ratio ~...
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MDPI AG
2022-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/21/3713 |
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| author | Ghazanfar Nazir Adeela Rehman Sajjad Hussain Othman Hakami Kwang Heo Mohammed A. Amin Muhammad Ikram Supriya A. Patil Muhammad Aizaz Ud Din |
| author_facet | Ghazanfar Nazir Adeela Rehman Sajjad Hussain Othman Hakami Kwang Heo Mohammed A. Amin Muhammad Ikram Supriya A. Patil Muhammad Aizaz Ud Din |
| author_sort | Ghazanfar Nazir |
| collection | DOAJ |
| description | Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe<sub>2</sub>) heterojunction. The prepared Gr/ReSe<sub>2</sub>-HS demonstrated an excellent mobility of 380 cm<sup>2</sup>/Vs, current on/off ratio ~ 10<sup>4</sup>, photoresponsivity (R ~ 74 AW<sup>−1</sup> @ 82 mW cm<sup>−2</sup>), detectivity (D<sup>*</sup> ~ 1.25 × 10<sup>11</sup> Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe<sub>2</sub> device (mobility = 36 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup>, Ion/Ioff ratio = 1.4 × 10<sup>5</sup>–1.8 × 10<sup>5</sup>, R = 11.2 AW<sup>−1</sup>, D* = 1.02 × 10<sup>10</sup>, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe<sub>2</sub> (45 meV at V<sub>bg</sub> = 40 V) and Gr/ReSe<sub>2</sub>-HS (9.02 meV at V<sub>bg</sub> = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO<sub>2</sub> at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe<sub>2</sub>-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors. |
| first_indexed | 2024-03-09T18:47:21Z |
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| id | doaj.art-c1ea052054ed44ba8ccfd7d8a7c99584 |
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| last_indexed | 2024-03-09T18:47:21Z |
| publishDate | 2022-10-01 |
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| spelling | doaj.art-c1ea052054ed44ba8ccfd7d8a7c995842023-11-24T06:07:58ZengMDPI AGNanomaterials2079-49912022-10-011221371310.3390/nano12213713Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing ApplicationsGhazanfar Nazir0Adeela Rehman1Sajjad Hussain2Othman Hakami3Kwang Heo4Mohammed A. Amin5Muhammad Ikram6Supriya A. Patil7Muhammad Aizaz Ud Din8Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, KoreaDepartment of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, KoreaDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, KoreaDepartment of Chemistry, Faculty of Science, Jazan University, Jazan, Saudi ArabiaDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, KoreaDepartment of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi ArabiaSolar Cell Applications Research Lab, Department of Physics, Government College University Lahore, Lahore 54000, Punjab, PakistanDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, KoreaSchool of Materials and Energy, Southwest University, Chongqing 400715, ChinaHerein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe<sub>2</sub>) heterojunction. The prepared Gr/ReSe<sub>2</sub>-HS demonstrated an excellent mobility of 380 cm<sup>2</sup>/Vs, current on/off ratio ~ 10<sup>4</sup>, photoresponsivity (R ~ 74 AW<sup>−1</sup> @ 82 mW cm<sup>−2</sup>), detectivity (D<sup>*</sup> ~ 1.25 × 10<sup>11</sup> Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe<sub>2</sub> device (mobility = 36 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup>, Ion/Ioff ratio = 1.4 × 10<sup>5</sup>–1.8 × 10<sup>5</sup>, R = 11.2 AW<sup>−1</sup>, D* = 1.02 × 10<sup>10</sup>, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe<sub>2</sub> (45 meV at V<sub>bg</sub> = 40 V) and Gr/ReSe<sub>2</sub>-HS (9.02 meV at V<sub>bg</sub> = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO<sub>2</sub> at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe<sub>2</sub>-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.https://www.mdpi.com/2079-4991/12/21/3713grapheneReSe<sub>2</sub>heterostructurephotodetectorNO<sub>2</sub> gas sensorSchottky barrier height |
| spellingShingle | Ghazanfar Nazir Adeela Rehman Sajjad Hussain Othman Hakami Kwang Heo Mohammed A. Amin Muhammad Ikram Supriya A. Patil Muhammad Aizaz Ud Din Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications Nanomaterials graphene ReSe<sub>2</sub> heterostructure photodetector NO<sub>2</sub> gas sensor Schottky barrier height |
| title | Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications |
| title_full | Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications |
| title_fullStr | Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications |
| title_full_unstemmed | Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications |
| title_short | Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe<sub>2</sub> van der Waals Heterostructures for Excellent Photodetector and NO<sub>2</sub> Gas Sensing Applications |
| title_sort | bias modified schottky barrier height dependent graphene rese sub 2 sub van der waals heterostructures for excellent photodetector and no sub 2 sub gas sensing applications |
| topic | graphene ReSe<sub>2</sub> heterostructure photodetector NO<sub>2</sub> gas sensor Schottky barrier height |
| url | https://www.mdpi.com/2079-4991/12/21/3713 |
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