Nonvolatile ferroelectric field-effect transistors
There is growing interest in non-traditional materials for logic applications. Here, the authors demonstrate a domain device architecture based on ferroelectric LiNbO3 crystals with gate voltage controlled transistor without subthreshold swing and source voltage controlled nonvolatile transistor.
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-06-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-020-16623-9 |