Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability
The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with tren...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0098669 |