Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications
In this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark current-Voltage (I-V) curves and illuminated shortcircuit current-open circuit voltage (Isc-Voc) curves. To eliminat...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2009-01-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_28507_c6e603eb7ba3cfc316ea16d8dfb127ec.pdf |