Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications
In this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark current-Voltage (I-V) curves and illuminated shortcircuit current-open circuit voltage (Isc-Voc) curves. To eliminat...
| מחבר ראשי: | |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Unviversity of Technology- Iraq
2009-01-01
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| סדרה: | Engineering and Technology Journal |
| גישה מקוונת: | https://etj.uotechnology.edu.iq/article_28507_c6e603eb7ba3cfc316ea16d8dfb127ec.pdf |
| _version_ | 1827358238267408384 |
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| author | Khaleel I. Hassoon |
| author_facet | Khaleel I. Hassoon |
| author_sort | Khaleel I. Hassoon |
| collection | DOAJ |
| description | In this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark current-Voltage (I-V) curves and illuminated shortcircuit current-open circuit voltage (Isc-Voc) curves. To eliminate the effect ofseries resistance we used Norde method to extract effective SBHs. Experimentalresults showed good reasonable agreement of the barrier height values. There ismore than one mechanism to transport the current through the barrier. Thepossibility of using Te-nSi as a photovoltaic device is presented in this work. |
| first_indexed | 2024-03-08T06:07:54Z |
| format | Article |
| id | doaj.art-c21fd27013c044bca30f1efcc07674e9 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:07:54Z |
| publishDate | 2009-01-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-c21fd27013c044bca30f1efcc07674e92024-02-04T17:48:26ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582009-01-0127115215810.30684/etj.27.1.1128507Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic ApplicationsKhaleel I. HassoonIn this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark current-Voltage (I-V) curves and illuminated shortcircuit current-open circuit voltage (Isc-Voc) curves. To eliminate the effect ofseries resistance we used Norde method to extract effective SBHs. Experimentalresults showed good reasonable agreement of the barrier height values. There ismore than one mechanism to transport the current through the barrier. Thepossibility of using Te-nSi as a photovoltaic device is presented in this work.https://etj.uotechnology.edu.iq/article_28507_c6e603eb7ba3cfc316ea16d8dfb127ec.pdf |
| spellingShingle | Khaleel I. Hassoon Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications Engineering and Technology Journal |
| title | Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications |
| title_full | Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications |
| title_fullStr | Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications |
| title_full_unstemmed | Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications |
| title_short | Ultrathin Te Films on Si(111): Schottky Barrier Formation and Photovoltaic Applications |
| title_sort | ultrathin te films on si 111 schottky barrier formation and photovoltaic applications |
| url | https://etj.uotechnology.edu.iq/article_28507_c6e603eb7ba3cfc316ea16d8dfb127ec.pdf |
| work_keys_str_mv | AT khaleelihassoon ultrathintefilmsonsi111schottkybarrierformationandphotovoltaicapplications |