A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

Herein, physical reservoir computing with a redox‐based ion‐gating reservoir (redox‐IGR) comprising LixWO3 thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves a second‐order nonlinear dynamic equation by utilizing voltage pulse driven...

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Bibliographic Details
Main Authors: Tomoki Wada, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe
Format: Article
Language:English
Published: Wiley 2023-09-01
Series:Advanced Intelligent Systems
Subjects:
all-solid-state
ion-gating reservoir
ion-gating transistor
lithium ion
nanoionics
neuromorphic
Online Access:https://doi.org/10.1002/aisy.202300123

Internet

https://doi.org/10.1002/aisy.202300123

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