Optimization Considerations for Short Channel Poly-Si 1T-DRAM

Optimization Considerations for Short Channel Poly-Si 1T-DRAM

Capacitorless one-transistor dynamic random-access memory cells that use a polysilicon body (poly-Si 1T-DRAM) have been studied to overcome the scaling issues of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Generally, when the gate length of a silicon-on-insul...

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Bibliographic Details
Main Authors: Songyi Yoo, Woo-Kyung Sun, Hyungsoon Shin
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Electronics
Subjects:
capacitorless one-transistor dynamic random-access memory
1T-DRAM
polysilicon
grain boundary
trapped hole
trapped electron
Online Access:https://www.mdpi.com/2079-9292/9/6/1051

Internet

https://www.mdpi.com/2079-9292/9/6/1051

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