Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Combining diamond with GaN can significantly improve the heat dissipation performance of GaN-based devices. However, how to avoid the destructive damage to the GaN epi-layer caused by high-temperature hydrogen plasma during the diamond growth is still a problem. This study employed a Si transition l...

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Bibliographic Details
Main Authors: Yurui Wang, Deng Gao, Tong Zhang, Hao Zhang, Yu Zhang, Qiuming Fu, Hongyang Zhao, Zhibin Ma
Format: Article
Language:English
Published: Taylor & Francis Group 2023-12-01
Series:Functional Diamond
Subjects:
mpcvd
oes
double-substrate structure
diamond
gan
Online Access:http://dx.doi.org/10.1080/26941112.2023.2183097

Internet

http://dx.doi.org/10.1080/26941112.2023.2183097

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