The Road to a Robust and Affordable SiC Power MOSFET Technology

The Road to a Robust and Affordable SiC Power MOSFET Technology

This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias,...

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Bibliographic Details
Main Authors: Hema Lata Rao Maddi, Susanna Yu, Shengnan Zhu, Tianshi Liu, Limeng Shi, Minseok Kang, Diang Xing, Suvendu Nayak, Marvin H. White, Anant K. Agarwal
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Energies
Subjects:
SiC MOSFET
threshold voltage
oxide reliability
body diode
short circuit withstand time
Online Access:https://www.mdpi.com/1996-1073/14/24/8283

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https://www.mdpi.com/1996-1073/14/24/8283

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