The Road to a Robust and Affordable SiC Power MOSFET Technology
This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias,...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/24/8283 |
| _version_ | 1797505144987844608 |
|---|---|
| author | Hema Lata Rao Maddi Susanna Yu Shengnan Zhu Tianshi Liu Limeng Shi Minseok Kang Diang Xing Suvendu Nayak Marvin H. White Anant K. Agarwal |
| author_facet | Hema Lata Rao Maddi Susanna Yu Shengnan Zhu Tianshi Liu Limeng Shi Minseok Kang Diang Xing Suvendu Nayak Marvin H. White Anant K. Agarwal |
| author_sort | Hema Lata Rao Maddi |
| collection | DOAJ |
| description | This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described. |
| first_indexed | 2024-03-10T04:14:25Z |
| format | Article |
| id | doaj.art-c2cedf7acf394cbab0e81e339e2b9d89 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T04:14:25Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-c2cedf7acf394cbab0e81e339e2b9d892023-11-23T08:05:06ZengMDPI AGEnergies1996-10732021-12-011424828310.3390/en14248283The Road to a Robust and Affordable SiC Power MOSFET TechnologyHema Lata Rao Maddi0Susanna Yu1Shengnan Zhu2Tianshi Liu3Limeng Shi4Minseok Kang5Diang Xing6Suvendu Nayak7Marvin H. White8Anant K. Agarwal9Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, IndiaDepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USAThis article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.https://www.mdpi.com/1996-1073/14/24/8283SiC MOSFETthreshold voltageoxide reliabilitybody diodeshort circuit withstand time |
| spellingShingle | Hema Lata Rao Maddi Susanna Yu Shengnan Zhu Tianshi Liu Limeng Shi Minseok Kang Diang Xing Suvendu Nayak Marvin H. White Anant K. Agarwal The Road to a Robust and Affordable SiC Power MOSFET Technology Energies SiC MOSFET threshold voltage oxide reliability body diode short circuit withstand time |
| title | The Road to a Robust and Affordable SiC Power MOSFET Technology |
| title_full | The Road to a Robust and Affordable SiC Power MOSFET Technology |
| title_fullStr | The Road to a Robust and Affordable SiC Power MOSFET Technology |
| title_full_unstemmed | The Road to a Robust and Affordable SiC Power MOSFET Technology |
| title_short | The Road to a Robust and Affordable SiC Power MOSFET Technology |
| title_sort | road to a robust and affordable sic power mosfet technology |
| topic | SiC MOSFET threshold voltage oxide reliability body diode short circuit withstand time |
| url | https://www.mdpi.com/1996-1073/14/24/8283 |
| work_keys_str_mv | AT hemalataraomaddi theroadtoarobustandaffordablesicpowermosfettechnology AT susannayu theroadtoarobustandaffordablesicpowermosfettechnology AT shengnanzhu theroadtoarobustandaffordablesicpowermosfettechnology AT tianshiliu theroadtoarobustandaffordablesicpowermosfettechnology AT limengshi theroadtoarobustandaffordablesicpowermosfettechnology AT minseokkang theroadtoarobustandaffordablesicpowermosfettechnology AT diangxing theroadtoarobustandaffordablesicpowermosfettechnology AT suvendunayak theroadtoarobustandaffordablesicpowermosfettechnology AT marvinhwhite theroadtoarobustandaffordablesicpowermosfettechnology AT anantkagarwal theroadtoarobustandaffordablesicpowermosfettechnology AT hemalataraomaddi roadtoarobustandaffordablesicpowermosfettechnology AT susannayu roadtoarobustandaffordablesicpowermosfettechnology AT shengnanzhu roadtoarobustandaffordablesicpowermosfettechnology AT tianshiliu roadtoarobustandaffordablesicpowermosfettechnology AT limengshi roadtoarobustandaffordablesicpowermosfettechnology AT minseokkang roadtoarobustandaffordablesicpowermosfettechnology AT diangxing roadtoarobustandaffordablesicpowermosfettechnology AT suvendunayak roadtoarobustandaffordablesicpowermosfettechnology AT marvinhwhite roadtoarobustandaffordablesicpowermosfettechnology AT anantkagarwal roadtoarobustandaffordablesicpowermosfettechnology |