Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and f...

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Bibliographic Details
Main Authors: N. Srocka, A. Musiał, P.-I. Schneider, P. Mrowiński, P. Holewa, S. Burger, D. Quandt, A. Strittmatter, S. Rodt, S. Reitzenstein, G. Sęk
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5038137

Internet

http://dx.doi.org/10.1063/1.5038137

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