Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and f...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5038137 |
| _version_ | 1818689122659729408 |
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| author | N. Srocka A. Musiał P.-I. Schneider P. Mrowiński P. Holewa S. Burger D. Quandt A. Strittmatter S. Rodt S. Reitzenstein G. Sęk |
| author_facet | N. Srocka A. Musiał P.-I. Schneider P. Mrowiński P. Holewa S. Burger D. Quandt A. Strittmatter S. Rodt S. Reitzenstein G. Sęk |
| author_sort | N. Srocka |
| collection | DOAJ |
| description | The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation. |
| first_indexed | 2024-12-17T12:05:05Z |
| format | Article |
| id | doaj.art-c2f3d3201fa84492b0762fe2e8fca043 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-17T12:05:05Z |
| publishDate | 2018-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c2f3d3201fa84492b0762fe2e8fca0432022-12-21T21:49:40ZengAIP Publishing LLCAIP Advances2158-32262018-08-0188085205085205-910.1063/1.5038137007808ADVEnhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithographyN. Srocka0A. Musiał1P.-I. Schneider2P. Mrowiński3P. Holewa4S. Burger5D. Quandt6A. Strittmatter7S. Rodt8S. Reitzenstein9G. Sęk10Institute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, GermanyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandJCMwave GmbH, Bolivarallee 22, D-14050 Berlin, GermanyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandJCMwave GmbH, Bolivarallee 22, D-14050 Berlin, GermanyInstitute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, GermanyInstitute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, GermanyInstitute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, GermanyInstitute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, GermanyLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandThe main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation.http://dx.doi.org/10.1063/1.5038137 |
| spellingShingle | N. Srocka A. Musiał P.-I. Schneider P. Mrowiński P. Holewa S. Burger D. Quandt A. Strittmatter S. Rodt S. Reitzenstein G. Sęk Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography AIP Advances |
| title | Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography |
| title_full | Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography |
| title_fullStr | Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography |
| title_full_unstemmed | Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography |
| title_short | Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography |
| title_sort | enhanced photon extraction efficiency from ingaas gaas quantum dots in deterministic photonic structures at 1 3 μm fabricated by in situ electron beam lithography |
| url | http://dx.doi.org/10.1063/1.5038137 |
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