BEOL Process Effects on ePCM Reliability

BEOL Process Effects on ePCM Reliability

The effect of back-end of line (BEOL) process on cell performance and reliability of Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. The microscopic evolution of the Ge-rich GST alloy during process is the focus of the first part of the paper. A new metric for quantificat...

Full description

Bibliographic Details
Main Authors: A. Redaelli, A. Gandolfo, G. Samanni, E. Gomiero, E. Petroni, L. Scotti, A. Lippiello, P. Mattavelli, J. Jasse, D. Codegoni, A. Serafini, R. Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J.-C. Grenier, O. Weber, D. Turgis, A. Valery, S. Del Medico, V. Caubet, J.-P. Reynard, D. Dutartre, L. Favennec, A. Conte, F. Disegni, M. De Tomasi, A. Ventre, M. Baldo, D. Ielmini, A. Maurelli, P. Ferreira, F. Arnaud, F. Piazza, P. Cappelletti, R. Annunziata, R. Gonella
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
ePCM
reliability
BEOL
28nm FDSOI
embedded memory
emerging memory
Online Access:https://ieeexplore.ieee.org/document/9743565/

Internet

https://ieeexplore.ieee.org/document/9743565/

Similar Items