Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization

Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization

Abstract Bottom-up epitaxy has been widely applied for transition metal dichalcogenides (TMDCs) growth. However, this method usually leads to a high density of defects in the crystal, which limits its optoelectronic performance. Here, we show the effect of growth temperature on the defect formation,...

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Bibliographic Details
Main Authors: Long Fang, Haitao Chen, Xiaoming Yuan, Han Huang, Gen Chen, Lin Li, Junnan Ding, Jun He, Shaohua Tao
Format: Article
Language:English
Published: SpringerOpen 2019-08-01
Series:Nanoscale Research Letters
Subjects:
WSe2
Defects
Crystal stability
Photoluminescence
Raman scattering
Online Access:http://link.springer.com/article/10.1186/s11671-019-3110-z

Internet

http://link.springer.com/article/10.1186/s11671-019-3110-z

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