A Silicon Nanowire Ferroelectric Field‐Effect Transistor

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Abstract The design and characterization of a Schottky‐type ferroelectric field‐effect transistor based on a nominally undoped silicon nanowire are reported. The nanowire transistor is fabricated by top‐down technology starting from a silicon‐on insulator wafer. A thin ferroelectric Hf0.38Zr0.62O2 l...

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Bibliographic Details
Main Authors: Violetta Sessi, Maik Simon, Halid Mulaosmanovic, Darius Pohl, Markus Loeffler, Tom Mauersberger, Franz P. G. Fengler, Terence Mittmann, Claudia Richter, Stefan Slesazeck, Thomas Mikolajick, Walter M. Weber
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
FeFETs
ferroelectrics
HZO
multigate FETs
nonvolatile memory
Schottky‐barrier FETs
Online Access:https://doi.org/10.1002/aelm.201901244

Internet

https://doi.org/10.1002/aelm.201901244

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