In-Plane Resonant Nano-Electro-Mechanical Sensors: A Comprehensive Study on Design, Fabrication and Characterization Challenges
The newly proposed in-plane resonant nano-electro-mechanical (IP R-NEM) sensor, that includes a doubly clamped suspended beam and two side electrodes, achieved a mass sensitivity of less than zepto g/Hz based on analytical and numerical analyses. The high frequency characterization and numerical/ana...
Main Authors: | Hiroshi Mizuta, Faezeh Arab Hassani, Yoshishige Tsuchiya |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2013-07-01
|
Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/13/7/9364 |
Similar Items
-
Junction field-effect transistors/
by: 357702 Todd, Carl David
Published: (1968) -
The modeling and simulation of ballistic nano-scaled MOSFET /
by: 396329 Tee, Kok Peng
Published: (2006) -
Simulation of 0.18 micron mosfet and its characterization [compact disc]
by: 398154 Syafeeza Ahmad Radzi
Published: (2005) -
Simulation of 0.18 micron MOSFET and its characterization /
by: 398154 Syafeeza Ahmad Radzi
Published: (2005) -
The modeling and simulation of ballistic nano-scaled MOSFET [electronic resource] /
by: 396329 Tee, Kok Peng
Published: (2006)