New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications
A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency <inline-formula> <tex-math notation="LaTeX">$(\sim 500~\ma...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10364830/ |