High Pressure Processing of Ion Implanted GaN

High Pressure Processing of Ion Implanted GaN

It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Anne...

Full description

Bibliographic Details
Main Authors: Kacper Sierakowski, Rafal Jakiela, Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai, Tetsu Kachi, Michal Bockowski
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Electronics
Subjects:
ion implantation
gallium nitride
thermodynamics
ultra-high-pressure annealing
diffusion
diffusion coefficients
Online Access:https://www.mdpi.com/2079-9292/9/9/1380

Internet

https://www.mdpi.com/2079-9292/9/9/1380

Similar Items