Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water
As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely used for the preparation of various materials in the fields of microelectronics, energy and catalysis. As a high-κ gate dielectric to replace SiO2, zirconium oxide (ZrO2) has been prepared through the ALD method fo...
| Egile Nagusiak: | , , , , , , , , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
Frontiers Media S.A.
2022-11-01
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| Saila: | Frontiers in Chemistry |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.frontiersin.org/articles/10.3389/fchem.2022.1035902/full |