Investigation on Ge<sub>0.8</sub>Si<sub>0.2</sub>-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Investigation on Ge<sub>0.8</sub>Si<sub>0.2</sub>-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge<sub>0.8</sub>Si<sub>0.2</sub> was considered. In this work, a dual-selective atomic layer etching (ALE), includin...

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Bibliographic Details
Main Authors: Lu Xie, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Junjie Li, Guilei Wang, Anyan Du, Zhenzhen Kong, Qi Wang, Shunshun Lu, Chen Li, Yangyang Li, Weixing Huang, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
vertical Gate-all-around (vGAA)
p<sup>+</sup>-Ge<sub>0.8</sub>Si<sub>0.2</sub>/Ge stack
dual-selective wet etching
atomic layer etching (ALE)
Online Access:https://www.mdpi.com/2079-4991/11/6/1408

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https://www.mdpi.com/2079-4991/11/6/1408

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