Graphene–ZnO:N barristor on a polyethylene naphthalate substrate
Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process with a maximum process temperature below 200 °C. An on/off ratio of over 104 is obtained with a 0.1 A/cm2 drive current density at Vd = 0.5 V...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5017249 |