Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors
Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4707164 |